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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1404
DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -3 -6 2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE== IC=-100A; IE=0 IE=-50mA; IC=0 IC=-1.5A ;IB=-3mA IC=-3A ;IB=-30mA IC=-1.5A ;IB=-3mA IC=-3A ;IB=-30mA VCB=-100V; IE=0 VCE=-100V; RBE== IC=-1.5A ; VCE=-3V 1000 MIN -120 -120 -7
2SB1404
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE
TYP.
MAX
UNIT V V V
-1.5 -3.0 -2.0 -3.5 -10 -10 20000
V V V V A A
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1404
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3

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